Datasheet

1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143B package.
The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
 Low noise, high breakdown RF transistor
 AEC-Q101 qualified
 Minimum noise figure (NF
min
) = 0.65 dB at 900 MHz
 Maximum stable gain 20 dB at 900 MHz
 11 GHz f
T
silicon technology
1.3 Applications
 Applications requiring high supply voltages and high breakdown voltages
 Broadband amplifiers up to 2 GHz
 Low noise amplifiers for ISM applications
 ISM band oscillators
1.4 Quick reference data
BFU520
NPN wideband silicon RF transistor
Rev. 2 — 5 March 2014 Product data sheet
6
2
7



%
Table 1. Quick reference data
T
amb
=25  C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - 5 30 mA
P
tot
total power dissipation T
sp
 87 C
[1]
-- 450mW
h
FE
DC current gain I
C
=5mA; V
CE
=8V 60 95 200
C
c
collector capacitance V
CB
=8V; f=1MHz - 0.52 - pF
f
T
transition frequency I
C
=10mA; V
CE
= 8 V; f = 900 MHz - 10.5 - GHz