Datasheet
Table Of Contents
- 1. Product profile
- 2. Pinning information
- 3. Ordering information
- 4. Marking
- 5. Design support
- 6. Limiting values
- 7. Recommended operating conditions
- 8. Thermal characteristics
- 9. Characteristics
- 10. Application information
- 11. Package outline
- 12. Handling information
- 13. Abbreviations
- 14. Revision history
- 15. Legal information
- 16. Contact information
- 17. Contents
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23
package.
The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.6 dB at 900 MHz
Maximum stable gain 18 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
BFU550A
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014 Product data sheet
6
2
7
Table 1. Quick reference data
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - 15 50 mA
P
tot
total power dissipation T
sp
87 C
[1]
-- 450mW
h
FE
DC current gain I
C
=15mA; V
CE
=8V 60 95 200
C
c
collector capacitance V
CB
=8V; f=1MHz - 0.74 - pF
f
T
transition frequency I
C
=25mA; V
CE
= 8 V; f = 900 MHz - 11 - GHz