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1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

1.2 Features and benefits

 Low noise high linearity RF transistor

 High output third-order intercept point 27 dBm at 1.8 GHz

 40 GHz f

silicon technology

1.3 Applications

 Analog/digital cordless applications

 X-band high output buffer amplifier

 ZigBee

 SDARS second stage LNA

 LTE, cellular, UMTS

BFU660F

NPN wideband silicon RF transistor

Rev. 1 — 11 January 2011 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Summary of content (12 pages)

PAGE 1
BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 16 V VCEO collector-emitter voltage open base - - 5.5 V VEBO emitter-base voltage open collector - - 2.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 4. Marking Table 4. Marking Type number Marking Description BFU660F D3* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 16 V VCEO collector-emitter voltage open base - 5.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 μA; IE = 0 mA 16 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 5.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions IP3O output third-order intercept point IC = 40 mA; VCE = 4 V; ZS = ZL = 50 Ω; Tamb = 25 °C [1] Min Typ Max Unit f = 1.5 GHz - 27 - dBm f = 1.8 GHz - 27 - dBm f = 2.4 GHz - 27 - dBm f = 5.8 GHz - 28 - dBm Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 001aam825 200 001aam826 25 CCBS (fF) fT (GHz) 160 20 120 15 80 10 40 5 0 0 0 4 8 12 0 20 40 60 80 VCB (V) f = 1 MHz, Tamb = 25 °C. Fig 4. 100 IC (mA) VCE = 1 V; f = 2 GHz; Tamb = 25 °C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 001aam828 40 G (dB) 001aam829 40 G (dB) 30 30 MSG MSG 20 20 |S21|2 Gp(max) Gp(max) |S21|2 10 10 0 0 0 2 4 6 8 10 0 2 4 6 8 f (GHz) VCE = 1 V; IC = 5 mA; Tamb = 25 °C. Fig 7. VCE = 1 V; IC = 30 mA; Tamb = 25 °C. Gain as a function of frequency; typical values 001aam830 3 10 f (GHz) Fig 8. Gain as a function of frequency; typical values 001aam831 2.0 NFmin (dB) NFmin (dB) 1.5 2 1.0 (1) 1 (2) (3) (4) 0.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description DC Direct Current LNA Low Noise Amplifier LTE Long Term Evolution NPN Negative-Positive-Negative RF Radio Frequency SDARS Satellite Digital Audio Radio Service UMTS Universal Mobile Telecommunications System 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU660F v.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
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BFU660F NXP Semiconductors NPN wideband silicon RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . .