Datasheet

1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
 Low noise high linearity microwave transistor
 High output third-order intercept point 34 dBm at 1.8 GHz
 40 GHz f
T
silicon technology
1.3 Applications
 Ka band oscillators DRO’s
 C-band high output buffer amplifier
 ZigBee
 LTE, cellular, UMTS
1.4 Quick reference data
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 16 V
V
CEO
collector-emitter voltage open base - - 5.5 V
V
EBO
emitter-base voltage open collector - - 2.5 V
I
C
collector current -70100mA
P
tot
total power dissipation T
sp
 85 C
[1]
-- 490mW
h
FE
DC current gain I
C
=20mA; V
CE
=2V; T
j
=25C90135180
C
CBS
collector-base capacitance V
CB
=2V; f=1MHz - 404 - fF
f
T
transition frequency I
C
=60mA; V
CE
=1V; f=2GHz;
T
amb
=25C
-18- GHz
G
p(max)
maximum power gain I
C
=60mA; V
CE
=1V; f=1.8GHz;
T
amb
=25C
[2]
-20.5- dB
NF noise figure I
C
=15mA; V
CE
=2V; f=1.8GHz; 
S
= 
opt
-0.65- dB
P
L(1dB)
output power at 1 dB gain compression I
C
=70mA; V
CE
=4V; Z
S
=Z
L
=50;
f=1.8GHz; T
amb
=25C
-22- dBm