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1. Product profile

1.1 General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a

plastic, 4-pin dual-emitter SOT343F package.

1.2 Features and benefits

 Low noise high gain microwave transistor

 Noise figure (NF) = 1.45 dB at 12 GHz

 High maximum power gain 14 dB at 12 GHz

 110 GHz f

silicon germanium technology

1.3 Applications

 2nd LNA stage and mixer stage in DBS LNB’s

 Low noise amplifiers for microwave communications systems

 Ka band oscillators DRO’s

 Low current battery equipped applications

 Microwave driver / buffer applications

 GPS

 RKE

 AMR

 ZigBee

 FM radio

 Mobile TV

 Bluetooth

BFU710F

NPN wideband silicon germanium RF transistor

Rev. 1 — 20 April 2011 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Summary of content (12 pages)

PAGE 1
BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
PAGE 2
BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 1.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number Marking Description BFU710F D5* * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 2.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 μA; IE = 0 mA 10 - - V IC = 1 mA; IB = 0 mA 2.8 - - V - 2 10 mA - 100 nA V(BR)CEO collector-emitter breakdown voltage IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 4.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions PL(1dB) output power at 1 dB gain compression IC = 5 mA; VCE = 2.5 V; ZS = ZL = 50 Ω; Tamb = 25 °C IP3 [1] Min Typ Max Unit f = 1.5 GHz - 5.5 - dBm f = 1.8 GHz - 5 - dBm f = 2.4 GHz - 5.5 - dBm f = 5.8 GHz - 4.5 - dBm f = 1.5 GHz - 18 - dBm f = 1.8 GHz - 18 - dBm IC = 10 mA; VCE = 1.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam845 40 001aam846 50 fT (GHz) CCBS (fF) 40 30 30 20 20 10 10 0 0 0 1 2 3 4 5 0 5 VCB (V) 15 IC (mA) f = 1 MHz, Tamb = 25 °C. Fig 4. 10 VCE = 2 V; f = 2 GHz; Tamb = 25 °C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 001aam848 50 001aam849 50 G (dB) G (dB) 40 40 30 30 MSG MSG 20 20 IS21I2 Gp(max) IS21I2 MSG MSG 10 Gp(max) 10 0 0 0 5 10 15 20 25 0 5 10 15 20 f (GHz) VCE = 2 V; IC = 2 mA; Tamb = 25 °C. Fig 7. VCE = 2 V; IC = 9 mA; Tamb = 25 °C. Gain as a function of frequency; typical values 001aam850 2.0 25 f (GHz) Fig 8. Gain as a function of frequency; typical values 001aam851 2.
PAGE 8
BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description AMR Automatic Meter Reading DBS Direct Broadcast Satellite DC Direct Current DRO Dielectric Resonator Oscillator FM Frequency Modulation GPS Global Positioning System LNA Low Noise Amplifier Ka Kurtz above LNB Low Noise Block NPN Negative-Positive-Negative RF Radio Frequency RKE Remote Keyless Entry 10. Revision history Table 9.
PAGE 10
BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 11
BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements.
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BFU710F NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . .