Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsLinear ICsBGA7127,118

1. Product profile

1.1 General description

The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount

package. It delivers 28 dBm output power at 1 dB gain compression and a superior

performance up to 2700 MHz. Its power saving features include simple quiescent current

adjustment, which allows class-AB operation and logic-level shutdown control to reduce

the supply current to 4 μA.

1.2 Features and benefits

 400 MHz to 2700 MHz frequency operating range

 12 dB small signal gain at 2 GHz

 28 dBm output power at 1 dB gain compression

 Integrated active biasing

 External matching allows broad application optimization of the electrical performance

 5 V single supply operation

 All pins ESD protected

1.3 Applications

1.4 Quick reference data

[1] Operation outside this range is possible but not guaranteed.

[2] P

= 17 dBm per tone; spacing = 1 MHz.

BGA7127

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

Rev. 3 — 3 December 2010 Product data sheet

 Broadband CPE/MoCA  Industrial applications

 WLAN/ISM/RFID  E-metering

 Wireless infrastructure (base station,

repeater, backhaul systems)

 Satellite Master Antenna TV (SMATV)

Table 1. Quick reference data

Input and output impedances matched to 50

, SHDN = HIGH (shutdown disabled). Typical values

at V

=5V; I

= 180 mA; T

case

=25

C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency

[1]

400 - 2700 MHz

power gain f = 2140 MHz 10.5 12.0 13.5 dB

L(1dB)

output power at 1 dB gain compression f = 2140 MHz 26.5 28.0 - dBm

IP3

output third-order intercept point f = 2140 MHz

[2]

39.0 42.0 - dBm

Summary of content (25 pages)

PAGE 1
BGA7127 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 3 — 3 December 2010 Product data sheet 1. Product profile 1.1 General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 2. Pinning information 2.1 Pinning terminal 1 index area n.c. 1 VCC(RF) 2 8 ICQ_ADJ 7 RF_IN 6 SHDN 5 VCC(BIAS) BGA7127 VCC(RF) 3 n.c. 4 GND PAD 001aam036 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description n.c.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 4. Functional diagram VCC SHDN 6 INPUT MATCH VCC(BIAS) ICQ_ADJ 5 8 BIAS ENABLE BANDGAP R2 V/I CONVERTER R1 2, 3 VCC(RF) RF_IN 7 RF_OUT OUTPUT MATCH GND 014aab047 Fig 2. Functional diagram 5. Shutdown control Table 4.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 6. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit RF supply voltage [1] - 6.0 V VCC(BIAS) bias supply voltage [1] - 6.0 V ICC supply current [1][2] - 325 mA Vctrl(sd) shutdown control voltage [3] 0.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 7. Thermal characteristics Table 6. Symbol Rth(j-mb) [1] Thermal characteristics Parameter Conditions Typ Max Unit thermal resistance from junction to mounting base Tcase = 85 °C; VCC = 5 V; ICC = 180 mA [1] 28 - K/W Defined as thermal resistance from junction to GND pad. 8. Static characteristics Table 7. Static characteristics Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled).
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9. Dynamic characteristics Table 8. Dynamic characteristics Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 9.1 Scattering parameters Table 9. Scattering parameters, MMIC only VCC = 5 V; ICC = 180 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 400 0.92 178 8.64 91 0.01 45 0.75 −173 500 0.91 176 6.95 88 0.01 49 0.76 −175 600 0.91 174 5.88 86 0.01 51 0.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12. Application information 12.1 920 MHz to 960 MHz at 5 V; 180 mA C6 R1 VCC C5 C8 C7 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 VCC(RF) RF_IN C2 MSL4 L1 MSL5 MSL6 C4 50 Ω MSL8 C3 BGA7127 ICQ_ADJ MSL7 SHDN R2 001aam037 enable See Table 12 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 5.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam172 0 RLin, RLout, ISL (dB) −5 001aam173 46 IP3O (dBm) (1) (2) (3) 44 (2) −10 42 −15 −20 40 (3) −25 38 −30 (1) −35 0.92 0.93 0.94 0.95 36 0.92 0.96 0.93 0.94 0.95 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 8. 0.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam525 43 IP3o (dBm) 41 (1) (2) 39 37 10 14 18 22 PL (dBm) per tone f = 940 MHz; tone spacing = 1 MHz. (1) Upper sideband (2) Lower sideband Fig 12. Output third-order intercept point as a function of output power per tone GND GND VCC ena ble n.c.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 12. 920 MHz to 960 MHz list of components See Figure 5 and Figure 13 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C4 capacitor 68 pF DC blocking GRM1885C1H680JA01D C2 capacitor 9.1 pF input match Murata GRM1885C1H9R1CZ01D C3 capacitor 5.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.2 1930 MHz to 1990 MHz at 5 V; 180 mA C6 R1 VCC C5 C7 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 VCC(RF) RF_IN C2 MSL3 MSL5 MSL4 MSL6 50 Ω C3 BGA7127 ICQ_ADJ C4 SHDN R2 001aam177 enable See Table 13 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 14.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam119 0 001aam120 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 (3) (1) −10 (1) 42 (2) (2) 40 (3) −20 38 −30 1.93 1.95 1.97 36 1.93 1.99 1.95 1.97 f (GHz) 1.99 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 17. Input return loss, output return loss and isolation as a function of frequency Fig 18.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 13. 1930 MHz to 1990 MHz list of components See Figure 14 and Figure 19 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1,C4 capacitor 15 pF DC blocking GRM1885C1H150JA01D C2 capacitor 2.7 pF input match Murata, GRM1885C1H2R7CZ01D C3 capacitor 1.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam121 32 PL(1dB) (dBm) 001aam122 18 Gp (dB) 30 16 (1) (2) (3) 28 14 (1) (2) (3) 26 12 24 10 22 2.11 2.13 2.15 2.17 8 2.11 2.13 2.15 f (GHz) (1) Tcase = 25 °C (1) Tcase = 25 °C (2) Tcase = 85 °C (2) Tcase = 85 °C (3) Tcase = −40 °C (3) Tcase = −40 °C Fig 21. Output power at 1 dB gain compression as a function of frequency 001aam123 0 2.17 f (GHz) Fig 22.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam526 0 001aam527 0 ACPR (dBc) −10 ACPR (dBc) −20 −20 −30 −40 (1) (2) (3) (4) −40 (1) (2) (3) (4) −50 −60 −60 −80 0 5 10 15 −70 20 25 PL(AV) (dBm) 2-carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7.5 dB; 5 MHz carrier spacing.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 C5 MSL4 L1 MSL1 C1 MSL2 MSL3 C2 C4 MSL5 C3 RF in RF out R2 001aam041 See Table 14 for a list of components. Fig 28. 2110 MHz to 2170 MHz application reference board Table 14. 2110 MHz to 2170 MHz list of components See Figure 20 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.4 2405 MHz to 2485 MHz at 5 V; 180 mA C6 R1 VCC C5 C7 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 L1 MSL3 C2 MSL4 VCC(RF) RF_IN MSL5 MSL6 50 Ω C3 BGA7127 ICQ_ADJ C4 SHDN R2 enable 001aam042 See Table 15 for a list of components. PCB board specification: Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm. Fig 29.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam127 0 001aam128 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 −10 (1) (2) (3) (1) 42 (2) (3) 40 −20 38 −30 2.405 2.425 2.445 36 2.405 2.465 2.485 f (GHz) Tcase = 25 °C. 2.425 2.445 2.465 2.485 f (GHz) PL = 17 dBm; tone spacing = 1 MHz. (1) RLin (1) Tcase = 25 °C (2) RLout (2) Tcase = 85 °C (3) ISL (3) Tcase = −40 °C Fig 32.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 15. 2405 MHz to 2485 MHz list of components See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1,C4 capacitor 15 pF DC blocking GRM1885C1H150JA01D C2 capacitor 1.5 pF input match Murata, GRM1885C1H1R5CZ01D C3 capacitor 1.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 13. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm SOT908-1 0 1 2 mm scale X B D A E A A1 c detail X terminal 1 index area e1 terminal 1 index area e v w b 1 4 M M C C A B C y1 C y L exposed tie bar (4×) Eh exposed tie bar (4×) 8 5 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 14. Abbreviations Table 16.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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BGA7127 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 8.1 9 9.1 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .