Datasheet

1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 110 MHz band.
1.2 Features and benefits
 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
I
Dq
of 40 mA, a t
p
of 100 s with  of 20 %:
 Output power = 1200 W
 Power gain = 28.5 dB
 Efficiency = 75 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 110 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 FM transmitter applications
BLF178P
Power LDMOS transistor
Rev. 2 — 16 February 2012 Product data sheet
Table 1. Application information
Test signal f V
DS
P
L
G
p

D
(MHz) (V) (W) (dB) (%)
CW 108 50 1000 26 75
pulsed RF 108 50 1200 28.5 75