Datasheet

BLF178P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 16 February 2012 7 of 13
NXP Semiconductors
BLF178P
Power LDMOS transistor
I
Dq
= 40 mA; f = 108 MHz; t
p
= 100 s;  =20%.
(1) V
DS
=15V
(2) V
DS
=20V
(3) V
DS
=25V
(4) V
DS
=30V
(5) V
DS
=35V
(6) V
DS
=40V
(7) V
DS
=45V
(8) V
DS
=50V
I
Dq
= 40 mA; f = 108 MHz; t
p
= 100 s;  =20%.
(1) V
DS
=15V
(2) V
DS
=20V
(3) V
DS
=25V
(4) V
DS
=30V
(5) V
DS
=35V
(6) V
DS
=40V
(7) V
DS
=45V
(8) V
DS
=50V
Fig 8. Power gain as a function of output power;
typical values
Fig 9. Drain efficiency as a function of output power;
typical values
aaa-002246
32
G
p
(dB)
20
P
L
(W)
0 400 800 1200 14001000600200
30
28
26
24
22
(6)
(5)
(4)
(3)
(7)
(2)
(8)
(1)
aaa-002247
90
η
D
(%)
10
P
L
(W)
0 400 800 1200 14001000600200
30
50
70
(6)
(5)
(4)
(3)
(7)
(2)
(8)
(1)