Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF571,112, MOSFET

1. Product proﬁle

1.1 General description

A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the

HF and VHF band.

1.2 Features

n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I

of 50 mA:

u Average output power = 20 W

u Power gain = 27.5 dB

u Efﬁciency = 70 %

n Easy power control

n Integrated ESD protection

n Excellent ruggedness

n High efﬁciency

n Excellent thermal stability

n Designed for broadband operation (10 MHz to 500 MHz)

n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Industrial, scientiﬁc and medical applications

n Broadcast transmitter applications

BLF571

HF / VHF power LDMOS transistor

Rev. 02 — 24 February 2009 Product data sheet

Table 1. Production test performance

Mode of operation f V

(MHz) (V) (W) (dB) (%)

CW 225 50 20 27.5 70

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (13 pages)

PAGE 1
BLF571 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 20 27.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF571 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.25 mA 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 25 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 50 mA 1.25 1.75 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj172 50 Coss (pF) 40 30 20 10 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF571 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 20 W; f = 225 MHz. 7.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj173 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 10 (7) (8) (9) (10) (11) 1 0 0.4 0.8 1.2 1.6 IDS(DC) (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 3. BLF571 electromigration BLF571_2 Product data sheet © NXP B.V. 2009. All rights reserved.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aaj174 30 80 ηD (%) Gp (dB) Gp (dB) 60 28 26 40 26 24 20 24 0 22 28 Gp 001aaj175 30 ηD 22 0 5 10 15 20 25 PL (W) 30 (5) (4) (3) (2) (1) 0 VDS = 50 V; IDq = 50 mA; f = 225 MHz. 5 10 15 20 25 PL (W) 30 VDS = 50 V; f = 225 MHz.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj176 50 PL (dBm) 48 ideal PL 46 (2) 44 (1) PL 42 40 13 15 17 19 21 Pi (dBm) VDS = 50 V; IDq = 50 mA; f = 225 MHz. (1) PL(1dB) = 43.3 dBm (21.4 W) (2) PL(3dB) = 44 dBm (25.1 W) Fig 6. Load power as function of input power; typical values 8.1.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 8.2 Test circuit Table 9. List of components All capacitors should be soldered vertically. For test circuit, see Figure 9 and Figure 10. Component Description Value Remarks C1, C3, C4, C5, C14 multilayer ceramic chip capacitor 100 pF [1] C2 multilayer ceramic chip capacitor 39 pF [1] C6 multilayer ceramic chip capacitor 68 pF [1] C7, C9 multilayer ceramic chip capacitor 1 nF [1] C8 multilayer ceramic chip capacitor 4.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor VGG C11 C7 C9 R1 input 50 Ω C1 L7 L6 L1 L8 C3 C4 L3 L10 L2 L11 L9 L16 L4 L17 L13 C2 VDD C8 C5 L12 C6 L19 L5 L20 L18 L21 C14 output 50 Ω L14 L15 C10 C12 C13 001aaj179 Fig 9. Class-AB common-source production test circuit C11 C8 C7 C9 R1 L1 C1 L3 L2 C2 C3 C4 3 mm 5.5 mm C5 C6 L5 L4 C12 C10 9 mm 6.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BLF571 NXP Semiconductors HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . .