Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF573S,112, MOSFET

1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific

and medical applications in the HF to 500 MHz band.

1.2 Features and benefits

 Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

of 900 mA:

 Average output power = 300 W

 Power gain = 27.2 dB

 Efficiency = 70 %

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF and VHF band)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

BLF573; BLF573S

HF / VHF power LDMOS transistor

Rev. 3 — 8 July 2010 Product data sheet

Table 1. Production test information

Mode of operation f V

(MHz) (V) (W) (dB) (%)

CW 225 50 300 27.2 70

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (16 pages)

PAGE 1
BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pin Pinning Description Simplified outline Graphic symbol BLF573 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF573S (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA Min Typ Max Unit 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 375 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 900 mA 1.45 1.95 2.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 001aaj141 800 Coss (pF) 600 400 200 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj142 105 Years (1) (2) (3) (4) (5) (7) (8) (9) (10) (11) (6) 104 103 102 10 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 3.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 RF Performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aaj612 30 ηD (%) Gp (dB) 28 001aaj613 30 80 (7) (6) (5) Gp (dB) 60 28 40 26 20 24 Gp ηD 26 24 22 0 100 200 0 400 300 (1) (2) (3) (4) 22 0 100 200 PL (W) 300 400 PL (W) VDS = 50 V; IDq = 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 001aaj614 60 PL (dBm) Ideal PL 58 (2) 56 (1) PL 54 52 50 24 26 28 30 32 34 Pi (dBm) VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (330 W) (2) PL(3dB) = 55.8 dBm (380 W) Fig 6. Load power as function of input power; typical values BLF573_BLF573S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 © NXP B.V. 2010. All rights reserved.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 8.1.2 2-Tone CW 001aaj615 30 ηD (%) Gp (dB) 28 ηD 26 24 −20 40 −40 20 22 0 100 200 300 IMD3 (dBc) 60 Gp VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) (2) (3) (4) (5) (8) (7) (6) −60 −80 0 400 500 PL(PEP) (W) 001aaj616 0 80 0 100 200 300 400 500 PL(PEP) (W) VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor Table 9. List of components …continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 μm.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor B1 C19 C9 C8 C13 C14 C7 C3 C20 R1 L2 L1 C18 C1 C2 C4 C5 C6 C17 C16 C11 C12 C10 C15 001aaj149 Fig 10. Component layout for class-AB production test circuit BLF573_BLF573S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 July 2010 © NXP B.V. 2010. All rights reserved.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 10. Abbreviations Table 10.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
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BLF573; BLF573S NXP Semiconductors HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . .