Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF574,112, MOSFET

1. Product proﬁle

1.1 General description

A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial

applications in the HF to 500 MHz band.

1.2 Features

n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I

of 1000 mA:

u Average output power = 500 W

u Power gain = 26.5 dB

u Efﬁciency = 70 %

n Easy power control

n Integrated ESD protection

n Excellent ruggedness

n High efﬁciency

n Excellent thermal stability

n Designed for broadband operation (10 MHz to 500 MHz)

n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n Industrial, scientiﬁc and medical applications

n Broadcast transmitter applications

BLF574

HF / VHF power LDMOS transistor

Rev. 02 — 24 February 2009 Product data sheet

Table 1. Application information

Mode of operation f V

(MHz) (V) (W) (dB) (%)

CW 225 50 500 26.5 70

108 50 600 27.5 73

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (18 pages)

PAGE 1
BLF574 HF / VHF power LDMOS transistor Rev. 02 — 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 500 26.5 70 108 50 600 27.5 73 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF574 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA Min Typ Max Unit 110 - - V 2.25 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 250 mA 1.25 1.7 VGSq gate-source quiescent voltage VDS = 50 V; ID = 500 mA 1.35 1.85 2.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj126 500 Coss (pF) 400 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values per section 6.1 Ruggedness in class-AB operation The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA; PL = 400 W; f = 225 MHz.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 7. Application information 7.1 RF performance RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone CW 001aaj127 30 Gp (dB) ηD (%) ηD Gp (dB) 60 28 26 40 26 24 20 24 28 001aaj128 30 80 (7) (6) (5) Gp 22 0 200 22 0 600 400 (4) (3) (2) (1) 0 100 200 PL(PEP) (W) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. 300 400 500 PL (W) VDS = 50 V; f = 225 MHz.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj129 60 PL (dBm) 58 Ideal PL (1) PL 56 54 52 50 24 26 28 30 32 34 Ps (dBm) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 57.32 dBm (540 W) Fig 4. Load power as function of source power; typical values 7.1.2 2-Tone CW 001aaj130 30 Gp (dB) ηD (%) ηD 28 001aaj131 0 80 IMD3 (dBc) 60 −20 40 −40 (1) (2) (3) Gp 26 (4) (5) 24 20 22 0 200 400 0 600 800 PL(PEP) (W) VDS = 50 V; IDq = 1000 mA; f1 = 224.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 7.1.3 Application circuit Table 8. List of components For application circuit, see Figure 7. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor L1 R3 T1 + C10 C6 C7 T3 C12 R1 C17 L2 C13 C1 C3 C4 C5 C20 L6 L8 L9 L5 L7 L10 L11 C14 C18 C23 C21 C24 C2 L12 C15 C19 C22 L3 R2 C16 C8 T2 C9 + C11 T4 R4 L4 001aaj132 Fig 7. Component layout for class-AB application circuit BLF574_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj133 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 (7) (8) (9) (10) (11) 10 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 8. BLF574 electromigration (ID, total device) BLF574_2 Product data sheet © NXP B.V. 2009.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 Impedance information Table 9. Typical impedance Simulated ZS and ZL test circuit impedances. f ZS ZL MHz Ω Ω 225 3.2 + j2.5 7.5 + j4.0 drain ZL gate ZS 001aaf059 Fig 9. Definition of transistor impedance BLF574_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW 001aaj134 30 Gp (dB) 80 ηD (%) ηD 28 001aaj135 30 Gp (dB) 60 28 40 26 (7) (6) (5) Gp 26 24 20 22 0 100 200 300 0 400 500 PL (W) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (4) (3) (2) (1) 24 22 0 100 200 300 400 500 PL (W) VDS = 50 V; f = 225 MHz.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj136 60 PL (dBm) 58 ideal PL (1) 56 PL 54 52 50 24 26 28 30 32 34 Ps (dBm) VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 56.43 dBm (440 W) Fig 12. Load power as function of source power; typical values 8.2.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 8.2.3 Test circuit Table 10. List of components For production test circuit, see Figure 15 and Figure 16. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor VDD C12 VGG R3 L3 C8 C11 C7 R2 L1 C14 C18 C20 C23 T1 C1 C3 input 50 Ω T2 C4 C5 C16 C22 L6 L8 L9 L11 L5 L7 L10 L12 C17 C2 C21 output 50 Ω T3 T4 C19 C24 C15 R1 L2 C10 C6 C9 VGG L4 L4 C13 001aaj139 VDD Fig 15.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 e E E1 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 mm inches 9.53 9.27 F H H1 L 1.75 17.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BLF574 NXP Semiconductors HF / VHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.1.3 7.2 8 8.1 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . .