Datasheet

1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
1.2 Features
 Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
I
Dq
of 40 mA, a t
p
of 100 μs with δ of 20 %:
 Output power = 1200 W
 Power gain = 24 dB
 Efficiency = 71 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 500 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications
BLF578
Power LDMOS transistor
Rev. 02 — 4 February 2010 Product data sheet
Table 1. Application information
Mode of operation f V
DS
P
L
G
p
η
D
(MHz) (V) (W) (dB) (%)
CW 108 50 1000 26 75
pulsed RF 225 50 1200 24 71
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.