Datasheet

1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
1.2 Features and benefits
 CW performance at 1300 MHz, a drain-source voltage V
DS
of 32 V and a quiescent
drain current I
Dq
=0.2A :
 Average output power = 35 W
 Power gain = 19 dB
 Drain efficiency = 63 %
 2-tone performance at 1300 MHz, a drain-source voltage V
DS
of 32 V and a quiescent
drain current I
Dq
=0.2A :
 Average output power = 17.5 W
 Power gain = 19 dB
 Drain efficiency = 48 %
 Intermodulation distortion = 28 dBc
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011 Product data sheet
Table 1. Typical performance
RF performance at T
h
= 25  C in a common source test circuit.
Mode of operation f V
DS
P
L
G
p

D
IMD
(MHz) (V) (W) (dB) (%) (dBc)
CW, class-AB 1300 32 35 19 63 -
2-tone, class-AB 1300 32 17.5 19 48 28