Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G10-45,112, MOSFET

1. Product profile

1.1 General description

45 W LDMOS power transistor for base station applications at frequencies from 700 MHz

to 1000 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing5MHz.

1.2 Features and benefits

 Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a

supply voltage of 28 V and an I

of 350 mA:

 Average output power = 1.0 W

 Gain = 22.5 dB

 Efficiency = 7.8 %

 ACPR = 48.5 dBc

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G10-45

Power LDMOS transistor

Rev. 3 — 11 March 2013 Product data sheet

Table 1. Typical performance

RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation f V

L(AV)



ACPR

(MHz) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 920 to 960 28 1.0 22.5 7.8 48.5

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (12 pages)

PAGE 1
BLF6G10-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 920 to 960 28 1.0 22.5 7.8 48.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 [1] 2 3 3 2 sym112 [1] Connected to flange. 3. Ordering information Table 3.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 72 mA 1.35 1.9 2.35 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 430 mA 1.7 2.15 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 001aah527 25 75 ηD (%) Gp (dB) ηD 23 60 45 21 19 30 Gp 15 17 15 0 0 10 20 30 40 50 PL (W) VDS = 28 V; IDq = 350 mA; f = 960 MHz. Fig 1.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 001aah530 25 Gp (dB) 16 ηD (%) Gp 12 23 (1) (2) (1) 001aah531 −40 ACPR (dBc) −45 (1) (2) (2) 21 19 8 −50 4 −55 0 −60 ηD 17 20 24 28 32 36 PL(AV) (dBm) VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz. 20 24 (1) f = 955 MHz. (2) f = 925 MHz. (2) f = 925 MHz.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor − + F1 R2 C16 C10 C12 C13 C9 C11 C15 R1 C1 C8 C14 C2 C3 C6 C7 C4 C5 001aah533 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 7. Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA Table 8. List of components (see Figure 6 and Figure 7). All capacitors should be soldered vertically.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 A w2 D1 A B C U1 q w2 B H c C A B C 1 p U2 E1 w3 A E B 2 w1 A B b C Q 0 5 10 mm scale Dimensions (millimetre dimensions are derived from the original inch dimensions) Unit mm A b c D D1 E E1 F H p Q q U1 U2 w1 w2 w3 20.45 9.91 max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 3.30 1.70 0.25 0.25 0.25 15.24 nom 20.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9.
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BLF6G10-45 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 11
BLF6G10-45 NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 12
BLF6G10-45 NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . .