Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G10LS-135RN:11, MOSFET

1. Product profile

1.1 General description

135 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

1.2 Features

 Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an I

of 950 mA:

 Average output power = 26.5 W

 Power gain = 21.0 dB

 Efficiency = 28.0 %

 ACPR = −39 dBc

 Easy power control

 Integrated ESD protection

 Enhanced ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G10-135RN;

BLF6G10LS-135RN

Power LDMOS transistor

Rev. 02 — 21 January 2010 Product data sheet

Table 1. Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation f V

L(AV)

ACPR

(MHz) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 869 to 894 28 26.5 21.0 28.0 −39

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (11 pages)

PAGE 1
BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f (MHz) 2-carrier W-CDMA 869 to 894 [1] VDS ηD ACPR (dB) (%) (dBc) 21.0 28.0 −39[1] PL(AV) Gp (V) (W) 28 26.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G10-135RN (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G10LS-135RN (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Rth(j-case) thermal resistance from Tcase = 80 °C; PL = 25 W junction to case Type Typ Unit BLF6G10-135RN 0.68 K/W BLF6G10LS-135RN 0.56 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage Conditions Min Typ Max Unit VGS = 0 V; ID = 0.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 001aah864 24 75 ηD (%) Gp (dB) 60 23 22 45 Gp 30 21 ηD 15 20 19 0 40 80 0 160 120 PL (W) VDS = 28 V; IDq = 950 mA; f = 881 MHz. Fig 1.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 001aah867 24 ηD (%) Gp (dB) 23 40 22 30 001aah868 −20 50 ACPR (dBc) −30 Gp 20 21 −40 ηD 10 20 19 −50 0 0 12 24 36 48 60 PL(AV) (W) 20 40 60 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. Fig 4. 0 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. Fig 5.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor C18 C8 C9 C20 L1 R1 R3 C10 C11 Q1 C4 C3 C6 R2 C17 C1 C2 C7 C5 C19 C16 C14 C15 C12 C13 IN 800 -1000 MHz V1.0 OUT 800 -1000 MHz V1.0 001aah870 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components See Figure 6 and Figure 7.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9.
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BLF6G10(LS)-135RN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLF6G10(LS)-135RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . .