Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G10LS-160RN,11, MOSFET

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing5MHz.

1.2 Features

 Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a

supply voltage of 32 V and an I

of 1200 mA:

 Average output power = 32 W

 Power gain = 22.5 dB

 Efficiency = 27 %

 ACPR = −41 dBc

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G10-160RN;

BLF6G10LS-160RN

Power LDMOS transistor

Rev. 02 — 21 January 2010 Product data sheet

Table 1. Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation f V

L(AV)

ACPR

(MHz) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 920 to 960 32 32 22.5 27 −41

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (11 pages)

PAGE 1
BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) (MHz) (V) (W) 2-carrier W-CDMA 920 to 960 32 32 [1] ηD ACPR (dB) (%) (dBc) 22.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 32 W BLF6G10-160RN 0.5 K/W BLF6G10LS-160RN 0.44 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah475 24 60 ηD ηD (%) Gp (dB) 22 40 Gp 20 20 18 0 40 80 120 0 160 200 PL (W) VDS = 32 V; IDq = 1200 mA; f = 960 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 7.
PAGE 5
BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aaj516 24 ηD (%) Gp (dB) 23 ACPR (dBc) 40 −20 Gp 22 001aah479 0 50 30 ηD −40 21 20 20 10 −60 19 −80 0 0 20 40 60 0 20 40 PL(AV) (W) VDS = 32 V; IDq = 1200 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz. Fig 4. 60 PL(AV) (W) VDS = 32 V; IDq = 1200 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor − C7 C11 C12 C10 R1 L1 C6 C5 C9 C8 C15 + C16 R2 C3 C2 C1 C4 C13 C14 001aah481 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 7. Component layout Table 8. List of components (see Figure 6 and Figure 7) All capacitors should be soldered vertically.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9.
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BLF6G10(LS)-160RN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLF6G10(LS)-160RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . .