Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G10LS-200RN:11, MOSFET

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

1.2 Features

 Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an I

of 1400 mA:

 Average output power = 40 W

 Power gain = 20 dB

 Efficiency = 28.5 %

 ACPR = −39 dBc

 Easy power control

 Integrated ESD protection

 Enhanced ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G10-200RN;

BLF6G10LS-200RN

Power LDMOS transistor

Rev. 02 — 21 January 2010 Product data sheet

Table 1. Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation f V

L(AV)

ACPR

(MHz) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 869 to 894 28 40 20 28.5 −39

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (11 pages)

PAGE 1
BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 1.3 Applications RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 40 W BLF6G10-200RN 0.50 K/W BLF6G10LS-200RN 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aaj415 21 60 Gp Gp (dB) ηD (%) 19 40 ηD 17 20 15 0 40 80 120 0 160 200 PL (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.
PAGE 5
BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 7.4 2-carrier W-CDMA 001aaj417 22 IMD3, ACPR (dBc) ηD (%) Gp (dB) 21 001aah522 −35 40 −40 30 IMD3 20 Gp ηD 19 18 0 20 40 20 −45 10 −50 0 −55 60 ACPR 0 20 40 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz); carrier spacing 10 MHz. Fig 4. 60 PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz); carrier spacing 10 MHz.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor C7 C8 R1 R3 C11 C13 C3 Q1 L1 C17 R2 C5 C16 C1 C6 C2 C15 C12 C14 C18 C9 C10 NXP IN 800 -1000 MHz V1.0 NXP OUT 800 -1000 MHz V1.0 001aah524 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components See Figure 6 and Figure 7.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9.
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BLF6G10(LS)-200RN NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLF6G10(LS)-200RN Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . .