Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF6G20-45,112, MOSFET

1. Product profile

1.1 General description

45 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 5 MHz.

1.2 Features and benefits

 Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz,

a supply voltage of 28 V and an I

of 360 mA:

 Average output power = 2.5 W

 Power gain = 19.2 dB (typ)

 Efficiency = 14 %

 ACPR = 50 dBc

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1800 MHz to 2000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

BLF6G20-45; BLF6G20S-45

Power LDMOS transistor

Rev. 3 — 11 March 2013 Product data sheet

Table 1. Typical performance

RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation f V

L(AV)



ACPR

(MHz) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 1805 to 1880 28 2.5 19.2 14 50

[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Summary of content (13 pages)

PAGE 1
BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f (MHz) (V) (W) 2-carrier W-CDMA 1805 to 1880 28 2.5 [1] VDS PL(AV) D ACPR (dB) (%) (dBc) 19.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G20-45 (SOT608A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 2 sym112 BLF6G20S-45 (SOT608B) 1 drain 2 gate 3 source 1 [1] 1 3 2 3 2 sym112 [1] Connected to flange. 3.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Rth(j-case) thermal resistance from junction to case Conditions Typ Unit Tcase = 80 C; PL(AV) = 12.5 W 1.7 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 001aah545 22 60 ηD (%) Gp (dB) 20 50 Gp 40 18 ηD 16 30 14 20 12 10 0 10 20 30 40 50 PL (W) VDS = 28 V; IDq = 360 mA; f = 1842 MHz. Fig 1.
PAGE 5
BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 001aah548 25 ηD (%) Gp (dB) ηD 23 001aah549 −20 50 ACPR (dBc) 40 −30 30 21 −40 Gp 19 20 −50 10 17 15 −60 0 0 3 6 9 12 15 PL(AV) (W) VDS = 28 V; IDq = 360 mA; f1 = 1840.5 MHz; f2 = 1845.5 MHz; carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values 0 3 6 9 12 15 PL(AV) (W) VDS = 28 V; IDq = 360 mA; f1 = 1840.5 MHz; f2 = 1845.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor C3 C14 C13 C4 C5 R1 C6 C8 C10 C9 C2 C11 C12 C7 C16 C15 C1 001aah551 Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) (r = 2.2), thickness = 0.79 mm. See Table 8 for list of components. Fig 7. Component layout for 1805 MHz and 1880 MHz test circuit BLF6G20-45_BLF6G20S-45 Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor Table 8. List of components For test circuit, see Figure 6 and Figure 7. Component Description Value Remarks C1 multilayer ceramic chip capacitor 0.7 pF [1] C2 multilayer ceramic chip capacitor 3.9 pF [1] C3, C13 tantalum capacitor 10 F C4, C5 multilayer ceramic chip capacitor 1.5 F C6, C10 multilayer ceramic chip capacitor 10 pF [1] C7 multilayer ceramic chip capacitor 1.
PAGE 8
BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 A w2 D1 A B C U1 q w2 B H c C A B C 1 p U2 E1 w3 A E B 2 w1 A B b C Q 0 5 10 mm scale Dimensions (millimetre dimensions are derived from the original inch dimensions) Unit mm A b c D D1 E E1 F H p Q q U1 U2 w1 w2 w3 20.45 9.91 max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 3.30 1.70 0.25 0.25 0.
PAGE 9
BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 A w2 D1 U1 A B C C c 1 U2 H E E1 2 B w2 w1 A B A B C b C Q 0 5 mm scale Dimensions (millimetre dimensions are derived from the original inch dimensions) Unit mm A b c D D1 E E1 F H Q U1 U2 w1 w2 max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 1.70 10.24 10.24 0.25 0.25 nom min 3.76 6.99 0.10 10.01 10.03 10.01 10.03 0.89 15.11 1.45 9.98 9.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9.
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BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 12
BLF6G20-45; BLF6G20S-45 NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 13
NXP Semiconductors BLF6G20-45; BLF6G20S-45 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . .