Datasheet

BLF6G20-110_BLF6G20LS-110_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 13 January 2009 2 of 10
NXP Semiconductors
BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
1.3 Applications
n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G20-110 (SOT502A)
1 drain
2 gate
3 source
[1]
BLF6G20LS-110 (SOT502B)
1 drain
2 gate
3 source
[1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G20-110 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF6G20LS-110 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 65 V
V
GS
gate-source voltage −0.5 +13 V
I
D
drain current - 29 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 225 °C