Datasheet

1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
 Average output power = 25 W
 Gain = 18.2 dB
 Efficiency = 29 %
 IMD3 = −37 dBc
 ACPR = −41 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (2000 MHz to 2200 MHz)
 Internally matched for ease of use
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-100
Power LDMOS transistor
Rev. 3 — 12 November 2010 Product data sheet
Table 1. Typical performance
RF performance at T
case
= 25 ° C in a common source class-AB production test circuit.
Mode of operation f V
DS
P
L(AV)
G
p
η
D
IMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA 2110 to 2170 28 25 18.2 29 −37
[1]
−41
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.