Datasheet

1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R
th
providing excellent thermal stability
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
 RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 1 — 22 September 2011 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
= 25  C in a common source class-AB production test circuit.
Mode of operation f I
Dq
V
DS
P
L(AV)
G
p

D
ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 410 28 13.5 19 30 30
[2]
1805 to 1880
[1]
410 28 5 20.3 18.3 34.9
[2]
1-carrier W-CDMA 2110 to 2170 410 28 15 19 32 37
[3]
1805 to 1880
[1]
410 28 5 20.5 18.0 42.3
[3]