Datasheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from
869MHz to 960MHz.
[1] In a common source class-AB application test circuit.
[2] In a common source class-AB production test circuit.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (869 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use (input and output)
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
869 MHz to 960 MHz frequency range
BLF7G10L-250;
BLF7G10LS-250
Power LDMOS transistor
Rev. 4 — 13 September 2012 Product data sheet
Table 1. Typical performance
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing = 5 MHz. Typical RF performance at T
case
= 25
C.
Test signal f I
Dq
V
DS
P
L(AV)
G
p
D
ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 869 to 894
[1]
1800 30 60 19.5 27.4 35.6
2-carrier W-CDMA 920 to 960
[2]
1800 30 60 19.5 30.5 34