Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF7G22L-200,118, MOSFET

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2170 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R

providing excellent thermal stability

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2110 MHz to 2170 MHz frequency range

BLF7G22L-200;

BLF7G22LS-200

Power LDMOS transistor

Rev. 4 — 22 July 2011 Product data sheet

Table 1. Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation f I

L(AV)



ACPR

(MHz) (mA) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 2110 to 2170 1620 28 55 18.5 31 31

[1]

Summary of content (13 pages)

PAGE 1
BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1620 28 55 18.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-200 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-200 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 42 50.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data; IDq = 1620 mA; VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 2050 1.05  j4.04 2.04  j1.28 2110 1.18  j4.17 1.67  j1.52 2140 1.32  j4.68 1.67  j1.52 2170 1.58  j4.37 1.62  j1.63 2230 2.55  j5.14 1.51  j1.83 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.4 1-carrier W-CDMA 001aan066 19.0 Gp (dB) 50 ηD (%) Gp 18.6 40 18.2 30 001aan067 8 PAR 6 17.8 (1) (2) 20 ηD 4 (3) 10 17.4 0 80 100 PL(AV) (W) 17.0 0 20 40 60 2 30 110 190 270 PL(M) (W) VDS = 28 V; IDq = 1620 mA; PAR = 7.2 dB at 0.01  probability on the CCDF. VDS = 28 V; IDq = 1620 mA; f = 2140 MHz; PAR = 7.2 dB at 0.01  probability on the CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.5 2-carrier W-CDMA 001aan069 19.0 Gp (dB) 50 ηD (%) Gp Gp (dB) 40 18.6 30 18.2 17.8 20 17.8 17.4 10 17.4 18.6 18.2 001aan070 19.0 ηD 0 120 17.0 0 40 80 (1) (2) (3) 17.0 0 40 80 PL(AV) (W) 120 PL(AV) (W) VDS = 28 V; IDq = 1620 mA; f = 2140 MHz; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.01  probability on the CCDF. VDS = 28 V; IDq = 1620 mA; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.6 Test circuit 11 mm C4 C15 C2 C1 R1 C13 65.000 mm C6 C9 C10 C12 C7 C5 C11 C8 C14 C3 9 mm 18 mm 50.000 mm 50.000 mm 001aan552 See Table 9 for list of components. Fig 11. Component layout Table 9. List of components See Figure 11 for component layout. Component Description Value C1 multilayer ceramic chip capacitor 10 F [1] TDK multilayer ceramic chip capacitor 4.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10.
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BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
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NXP Semiconductors BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . .