Datasheet

1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R
th
providing excellent thermal stability
 Designed for broadband operation (2000 MHz to 2200 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent digital pre-distortion capability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22L-130;
BLF7G22LS-130
Power LDMOS transistor
Rev. 4 — 20 January 2011 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
= 25 ° C in a common source class-AB production test circuit.
Mode of operation f I
Dq
V
DS
P
L(AV)
G
p
η
D
ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 950 28 30 18.5 32 −32
[1]
1-carrier W-CDMA 2110 to 2170 950 28 33 18.5 33 −39
[2]