Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF7G24LS-100,112, MOSFET

1. Product profile

1.1 General description

100 W LDMOS power transistor for base station applications at frequencies from

2300 MHz to 2400 MHz.

[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is

3.84 MHz.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R

providing excellent thermal stability

 Designed for low memory effects providing excellent digital pre-distortion capability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to

2400 MHz frequency range

BLF7G24L-100;

BLF7G24LS-100

Power LDMOS transistor

Rev. 4 — 22 July 2011 Product data sheet

Table 1. Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation f I

L(AV)



ACPR

885k

ACPR

(MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc)

IS-95 2300 to 2400 900 28 20 18 27 46

[1]

1 carrier W-CDMA 2300 to 2400 900 28 30 18.7 33 - 40

[2]

Summary of content (14 pages)

PAGE 1
BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-100 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G24LS-100 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 001aan495 19.5 ηD (%) (2) Gp (dB) 001aan496 50 (1) 40 (2) (1) 18.5 30 20 17.5 10 0 16.5 0 20 40 60 80 0 20 40 60 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 001aan499 12 001aan500 200 PL(M) (W) PAR (dB) (1) 160 (2) 8 120 (1) 80 4 (2) 40 0 0 0 20 40 60 80 0 20 40 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G24L-100_7G24LS-100 Product data sheet 80 PL (W) (1) f = 2300 MHz Fig 5. 60 Fig 6.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.3 Pulsed CW 001aan501 19.5 ηD (%) (2) Gp (dB) 001aan502 60 50 (2) (1) 18.5 (1) 40 30 17.5 20 10 16.5 0 40 80 120 160 0 40 80 PL (W) VDS = 28 V; IDq = 900 mA. VDS = 28 V; IDq = 900 mA. (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Pulsed CW power gain as a function of load power; typical values BLF7G24L-100_7G24LS-100 Product data sheet 160 PL (W) (1) f = 2300 MHz Fig 7. 120 Fig 8.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aan503 19.5 001aan504 60 ηD (%) Gp (dB) 50 (2) 18.5 40 (1) (1) (2) 30 17.5 20 10 16.5 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 900 mA.
PAGE 8
BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 001aan507 8 001aan508 250 PL(M) (W) PAR (dB) 200 6 (1) (1) 150 (2) (2) 4 100 2 50 0 0 0 20 40 60 80 100 PL (W) 0 VDS = 28 V; IDq = 900 mA. 20 (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values Product data sheet 60 80 100 PL (W) VDS = 28 V; IDq = 900 mA.
PAGE 9
BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 8.
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BLF7G24L-100; BLF7G24LS-100 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
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NXP Semiconductors BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . .