Datasheet

BLF871_BLF871S_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 19 November 2009 4 of 19
NXP Semiconductors
BLF871; BLF871S
UHF power LDMOS transistor
7. Application information
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
V
GS
= 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values
001aaj276
V
DS
(V)
0604020
80
40
120
160
C
oss
(pF)
0
Table 7. RF performance in a common-source narrowband 860 MHz test circuit
T
h
= 25 ° C unless otherwise specified.
Mode of operation f V
DS
I
Dq
P
L(PEP)
P
L(AV)
G
p
η
D
IMD3 PAR
(MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB)
2-tone, class AB f
1
= 860;
f
2
= 860.1
40 0.5 100 - > 19 > 44 < −30 -
DVB-T (8k OFDM) 858 40 0.5 - 24 > 19 > 30 < −31
[1]
> 7.8
[2]