Datasheet

1. Product profile
1.1 General description
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 100 W broadband from HF
to 1 GHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features
 2-tone performance at 860 MHz, a drain-source voltage V
DS
of 40 V and a quiescent
drain current I
Dq
= 0.5 A:
 Peak envelope power load power = 100 W
 Power gain = 21 dB
 Drain efficiency = 47 %
 Third order intermodulation distortion = −35 dBc
 DVB performance at 858 MHz, a drain-source voltage V
DS
of 40 V and a quiescent
drain current I
Dq
= 0.5 A:
 Average output power = 24 W
 Power gain = 22 dB
 Drain efficiency = 33 %
 Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)
BLF871; BLF871S
UHF power LDMOS transistor
Rev. 04 — 19 November 2009 Product data sheet
Table 1. Typical performance
RF performance at V
DS
= 40 V in a common-source 860 MHz test circuit.
Mode of operation f P
L
P
L(PEP)
P
L(AV)
G
p
η
D
IMD3 PAR
(MHz) (W) (W) (W) (dB) (%) (dBc) (dB)
CW, class AB 860 100 - - 21 60 - -
2-tone, class AB f
1
= 860; f
2
= 860.1 - 100 - 21 47 −35 -
DVB-T (8k OFDM) 858 - - 24 22 33 −34
[1]
8.3
[2]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.