Datasheet

1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
[1] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
1.2 Features
n 2-Tone performance at 860 MHz, a drain-source voltage V
DS
of 42 V and a quiescent
drain current I
Dq
= 1.4 A:
u Peak envelope power load power = 300 W
u Power gain = 21 dB
u Drain efficiency = 46 %
u Third order intermodulation distortion = −35 dBc
n DVB performance at 858 MHz, a drain-source voltage V
DS
of 42 V and a quiescent
drain current I
Dq
= 1.4 A:
u Average output power = 75 W
u Power gain = 21 dB
u Drain efficiency = 32 %
u Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)
BLF878
UHF power LDMOS transistor
Rev. 02 — 15 June 2009 Product data sheet
Table 1. Typical performance
RF performance at V
DS
= 42 V in a common-source 860 MHz narrowband test circuit.
Mode of operation f P
L
P
L(PEP)
P
L(AV)
G
p
η
D
IMD3
(MHz) (W) (W) (W) (dB) (%) (dBc)
CW, class AB 860 300 - - 21 60 -
2-Tone, class AB f
1
= 860; f
2
= 860.1 - 300 - 21 46 −35
PAL BG 860 (ch69) 300 (peak sync.)
[1]
- - 21 45 -
DVB-T (8k OFDM) 858 - - 75 21 32 −32
[2]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.