Datasheet

BLF881_BLF881S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 5 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 CW
7.1.2 2-Tone
V
DS
=50V; I
Dq
= 0.5 A; measured in a common-source narrowband 860 MHz test circuit.
Fig 2. CW power gain and drain efficiency as function of load power; typical values
P
L
(W)
0 20016080 12040
001aal075
23
G
p
(dB)
21
19
17
16
18
20
22
70
η
D
(%)
50
30
10
0
20
40
60
G
p
η
D
V
DS
=50V; I
Dq
= 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
V
DS
=50V; I
Dq
= 0.5 A; measured in a common-source
narrowband 860 MHz test circuit.
Fig 3. 2-Tone power gain and drain efficiency as
function of average load power; typical values
Fig 4. 2-Tone third order intermodulation distortion
as a function of average load power; typical
values
P
L(AV)
(W)
0 16012040 80
0001aal076
23
G
p
(dB)
21
19
17
16
18
20
22
70
η
D
(%)
50
30
10
0
20
40
60
G
p
η
D
P
L(AV)
(W)
0 16012040 80
001aal077
−40
−20
0
IMD3
(dBc)
−60