Datasheet

1. Product profile
1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
1.2 Features and benefits
 2-Tone performance at 860 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
=0.5A:
 Peak envelope power load power = 140 W
 Power gain = 21 dB
 Drain efficiency = 49 %
 Third order intermodulation distortion = −34 dBc
 DVB performance at 858 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
=0.5A:
 Average output power = 33 W
 Power gain = 21 dB
 Drain efficiency = 34 %
 Shoulder distance = −33 dBc (4.3 MHz from center frequency)
 Integrated ESD protection
 Excellent ruggedness
 High power gain
BLF881; BLF881S
UHF power LDMOS transistor
Rev. 3 — 7 December 2010 Product data sheet
Table 1. Typical performance
RF performance at V
DS
= 50 V in a common-source 860 MHz test circuit.
Mode of operation f P
L
P
L(PEP)
P
L(AV)
G
p
η
D
IMD3 IMD
shldr
(MHz) (W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB f
1
= 860; f
2
= 860.1 - 140 - 21 49 −34 -
DVB-T (8k OFDM) 858 - - 33 21 34 - −33
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.