Datasheet

1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
 Excellent ruggedness
 Optimum thermal behavior and reliability, R
th(j-c)
= 0.22 K/W
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band
BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011 Product data sheet
Table 1. Application information
RF performance at V
DS
= 50 V unless otherwise specified.
Mode of operation f P
L(AV)
P
L(M)
G
p

D
IMD3 IMD
shldr
PAR
(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB f
1
= 860; f
2
= 860.1 150 - 21 46 32 - -
DVB-T (8k OFDM) 858 70 - 21 33 - 31
[1]
8.2
[2]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 70 - 20 32 - 32
[1]
8.0
[2]