Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLF888A,112, MOSFET

1. Product profile

1.1 General description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

[1] Measured at  = 10 %; t

= 100 s.

[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness (VSWR  40 : 1 through all phases)

 Optimum thermal behavior and reliability, R

th(j-c)

= 0.15 K/W

 Suitable for CW UHF and ISM applications

 High power gain

 High efficiency

 Designed for broadband operation (470 MHz to 860 MHz)

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

BLF888A; BLF888AS

UHF power LDMOS transistor

Rev. 5 — 4 November 2013 Product data sheet

Table 1. Application information

RF performance at V

= 50 V unless otherwise specified.

Mode of operation f P

L(AV)

L(M)



IMD3 IMD

shldr

PAR

(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)

RF performance in a common source narrowband test circuit

CW 650 - 600 20 67 - - -

CW (42 V) 650 - 500 20 69 - - -

2-tone, class-AB f

= 860; f

= 860.1 250 - 21 46 32 - -

pulsed, class-AB

[1]

860 - 600 20 58 - - -

DVB-T (8k OFDM) 858 110 - 21 31 - 32

[2]

8.2

[3]

858 125 - 21 32.5 - 30

[2]

8.0

[3]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM) 858 110 - 20 30 - 32

[2]

8.0

[3]

858 120 - 20 31 - 31

[2]

7.8

[3]

Summary of content (17 pages)

PAGE 1
BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 1.3 Applications  Communication transmitter applications in the UHF band  Industrial applications in the UHF band 2. Pinning information Table 2.
PAGE 3
BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 110 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C junction temperature Tj [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5.
PAGE 4
BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor Table 7. RF characteristics RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2-Tone, class-AB drain-source voltage VDS [1] - 50 - V - 1.3 IDq quiescent drain current - A PL(AV) average output power f1 = 860 MHz; f2 = 860.1 MHz 250 - - W Gp power gain f1 = 860 MHz; f2 = 860.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 6.1 Ruggedness in class-AB operation The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding to VSWR  40 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. 7. Application information 7.1 Narrowband RF figures 7.1.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 7.1.2 DVB-T 001aam582 24 Gp (dB) 22 Gp 0 IMDshldr (dBc) −10 001aam583 12 PAR (dB) 10 PAR 60 ηD (%) 50 −20 8 −30 6 16 −40 4 20 14 −50 2 10 −60 350 PL(AV) (W) 0 20 18 IMDshldr 12 0 50 100 150 200 250 300 DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values 30 ηD 0 VDS = 50 V; IDq = 1.3 A; measured in a common source narrowband 860 MHz test circuit. Fig 4.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 7.3 Impedance information drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 8. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T). BLF888A_BLF888AS Product data sheet f Zi ZL MHz   300 0.617  j1.715 4.989 + j1.365 325 0.635  j1.355 4.867 + j1.424 350 0.655  j1.026 4.741 + j1.472 375 0.677  j0.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 7.4 Reliability 001aam586 107 Years 106 (1) (2) (3) (4) (5) (6) 105 104 103 (7) (8) (9) (10) (11) 102 10 1 0 2 4 6 8 10 12 14 16 18 20 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 10, Figure 11 and Figure 12. Component Description Value B1, B2 semi rigid coax 25 ; 49.5 mm C1 multilayer ceramic chip capacitor 12 pF [1] C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF [1] C7 multilayer ceramic chip capacitor 6.8 pF [2] C8 multilayer ceramic chip capacitor 2.7 pF [2] C9 multilayer ceramic chip capacitor 2.
PAGE 10
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor L3 L32 L5 L30 L1 50 mm L2 L31 L33 L4 L31 L2 L1 L30 L5 L32 L3 105 mm 001aam588 See Table 9 for a list of components. Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier 49.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10.
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BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 16
BLF888A; BLF888AS NXP Semiconductors UHF power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 17
NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.2 7.2.1 7.3 7.4 8 9 10 11 12 13 13.1 13.2 13.3 13.4 13.5 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . .