Datasheet

1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
920MHz to 960MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
 Excellent ruggedness
 High efficiency
 Low R
th
providing excellent thermal stability
 Designed for broadband operation (920 MHz to 960 MHz)
 Lower output capacitance for improved performance in Doherty applications
 Designed for low memory effects providing excellent pre-distortability
 Internally matched for ease of use
 Integrated ESD protection
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
920 MHz to 960 MHz frequency range
BLF8G10L-160;
BLF8G10LS-160
Power LDMOS transistor
Rev. 3 — 16 February 2012 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
= 25  C in a common source class-AB production test circuit.
Test signal f I
Dq
V
DS
P
L(AV)
G
p

D
ACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 38
[1]