Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLL6H0514LS-130,11, MOSFET

1. Product profile

1.1 General description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz

range.

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (0.5 GHz to 1.4 GHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

BLL6H0514L-130;

BLL6H0514LS-130

LDMOS driver transistor

Rev. 2 — 13 September 2010 Product data sheet

Table 1. Application information

Typical RF performance at T

case

=25



C; I

= 50 mA; in a class-AB application circuit.

Mode of operation f t

 V



droop(pulse)

(MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns)

pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8

1200 to 1400 300 10 50 130 17 10 50 0 15 8

Summary of content (13 pages)

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BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 BLL6H0514LS-130 (SOT1135B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 3 2 [1] Connected to flange. 3. Ordering information Table 3.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 C; PL = 130 W Typ Unit tp = 100 s;  = 10 % 0.17 K/W tp = 200 s;  = 10 % 0.22 K/W tp = 300 s;  = 10 % 0.25 K/W tp = 100 s;  = 20 % 0.23 K/W tp = 1 ms;  = 10 % 0.36 K/W 6. Characteristics Table 6.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 s;  = 10 %. 7. Application information 7.1 Impedance information Table 8. Typical impedance f ZS ZL MHz   1200 1.21  j3.44 2.40  j0.63 1300 1.56  j4.49 2.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 7.2 Performance curves 001aam262 20 Gp (dB) 60 ηD (%) Gp RLin (dB) 50 16 12 40 12 8 30 8 4 20 4 16 ηD 0 1.15 1.25 0 1.15 10 1.45 1.35 001aam263 20 1.25 1.35 f (GHz) VDS = 50 V; IDq = 50 mA; tp = 300 s;  = 10 %. Fig 2. Power gain and drain efficiency as function of frequency; typical values VDS = 50 V; IDq = 50 mA; tp = 300 s;  = 10 %. Fig 3. 001aam264 20 1.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 001aam266 160 PL (W) 120 80 (1) (2) (3) 40 0 0 1 2 3 4 Pi (W) VDS = 50 V; IDq = 50 mA; tp = 300 s;  = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz Fig 6. Load power as a function of input power; typical values 8. Test information R2 C3 C9 C11 C8 C2 C1 C4 C10 C5 C13 C12 R1 C6 C7 001aam267 Printed-Circuit Board (PCB) material: Duroid 6006 with r = 6.15 and thickness = 0.64 mm.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Table 9. List of components See Figure 7 for component layout.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 B q C c 1 H p U2 E1 w1 3 E B A A 2 b w2 C 0 5 mm 10 mm scale Dimensions Unit(1) Q A max 4.65 nom min 3.76 H p Q 5.26 b 0.18 9.65 9.65 9.65 9.65 1.14 c D D1 E E1 F 19.94 3.30 1.70 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45 q U1 U2 w1 w2 20.45 9.91 15.24 max 0.183 0.207 0.007 0.38 0.38 0.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H E1 U2 2 b w2 D 0 Q 5 10 mm scale Dimensions Unit(1) A H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.39 0.39 0.38 0.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
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NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information .