Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBLS6G2735LS-30,112, MOSFET

1. Product profile

1.1 General description

30 W LDMOS power transistor for S-band radar applications in the frequency range from

2.7 GHz to 3.5 GHz.

1.2 Features and benefits

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (2.7 GHz to 3.5 GHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz

BLS6G2735L-30;

BLS6G2735LS-30

S-band LDMOS transistor

Rev. 3 — 24 September 2012 Product data sheet

Table 1. Application information

Typical RF performance at T

case

=25



C; t

= 300





= 10 %; I

= 50 mA.

Test signal f V



(GHz) (V) (W) (dB) (%) (ns) (ns)

Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz

pulsed RF 3.1 to 3.5 32 30 13 50 20 10

Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz

pulsed RF 2.7 to 3.3 32 35 14 50 20 10

Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz

pulsed RF 2.7 to 3.5 32 30 12 47 20 10

Summary of content (17 pages)

PAGE 1
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.
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BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2735L-30 (SOT1135A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 BLS6G2735LS-30 (SOT1135B) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3.
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NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-c) transient thermal impedance from junction Th = 85 C; PL(CW) = 30 W to case t = 100 s;  = 10 % 0.507 K/W tp = 200 s;  = 10 % 0.662 K/W tp = 300 s;  = 10 % 0.761 K/W tp = 100 s;  = 20 % 0.594 K/W Conditions Typ p Unit 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified.
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BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 7. Application information 7.1 Circuit information for application circuit (2.7 GHz to 3.5 GHz) VDD C6 C5 C2 C4 C1 C3 VGG C7 aaa-001308 Printed-Circuit Board (PCB): Rogers 3006; r = 6.15; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 8 for a list of components. Fig 1. Component layout for RF test circuit Table 8. List of components For test circuit see Figure 1.
PAGE 5
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 7.2 Measured in application circuit from 2.7 GHz to 3.
PAGE 6
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor aaa-001304 20 RLin (dB) (1) (2) (3) (4) (5) (6) (7) (8) (9) 15 10 5 0 28 33 38 43 PL (dBm) 48 VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2900 MHz (4) f = 3000 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 4.
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BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor aaa-001305 35 Gp (dB) 30 (5) (4) (3) (2) (1) 70 ηD (%) 60 aaa-001306 50 (1) PL (W) ηD (2) (3) 40 25 (4) (5) 50 (6) 20 40 Gp 15 10 (8) (9) 30 20 20 (5) (4) (3) (2) (1) 10 5 0 (7) 30 10 0 10 20 30 40 PL (W) 50 0 0 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % 0 1 2 3 Pi (W) 4 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % (1) f = 2700 MHz (1) f = 2700 MHz (2) f = 2900 MHz (2) f = 2800 MH
PAGE 8
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor aaa-001307 20 RLin (dB) (1) (2) (3) (4) (5) (6) (7) (8) (9) 15 10 5 0 28 33 38 43 PL (dBm) 48 VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 % (1) f = 2700 MHz (2) f = 2800 MHz (3) f = 2900 MHz (4) f = 3000 MHz (5) f = 3100 MHz (6) f = 3200 MHz (7) f = 3300 MHz (8) f = 3400 MHz (9) f = 3500 MHz Fig 7.
PAGE 9
NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 8. Test information 8.1 Ruggedness in class-AB operation The BLS6G2735L-30 and BLS6G2735LS-30 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 50 mA; PL = 30 W; tp = 300 s;  = 10 %. 8.2 Impedance information Table 9. Typical impedance Source and load impedances obtained in a wideband test circuit. f ZS ZL GHz   2.7 3.4  j16.
PAGE 10
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 8.3 Circuit information for production test circuit (3.1 GHz to 3.5 GHz) & 9** & & & & 9'' & 5 & & 0+] 0+] 0+] 0+] Printed-Circuit Board (PCB): Rogers Duroid 6006; r = 6.15; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 10 for a list of components. Fig 9. Component layout for RF production test circuit Table 10.
PAGE 11
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 8.4 Measured in RF production test circuit from 3.1 GHz to 3.5 GHz *S G% DDD *S Ș' 3/ : DDD Ș' 3/ : VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 % (1) f = 3100 MHz (2) f = 3300 MHz (2) f = 3300 MHz (3) f = 3500 MHz (3) f = 3500 MHz Fig 10.
PAGE 12
BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 B q C c 1 H p U2 E1 w1 3 E B A A 2 b w2 C 0 5 mm 10 mm scale Dimensions Unit(1) Q A max 4.65 nom min 3.76 H p Q 5.26 b 0.18 9.65 9.65 9.65 9.65 1.14 c D D1 E E1 F 19.94 3.30 1.70 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45 q U1 U2 w1 w2 20.45 9.91 15.24 max 0.183 0.207 0.007 0.
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BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H E1 U2 2 b w2 D 0 Q 5 10 mm scale Dimensions Unit(1) A H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.39 0.39 0.38 0.
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NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 11.
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NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
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NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . .