DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching DESCRIPTION 1 g gate • No secondary breakdown 2 s source • Direct interface to C-MOS, TTL etc. 3 d drain APPLICATIONS • Power management handbook, halfpage 3 d • DC to DC converters • Battery powered applications • ‘Glue-logic’; interface between logic blocks and/or periphery g • General purpose switch.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 30 V VGS gate-source voltage (DC) − ±8 V ID drain current (DC) Ts = 80 °C; note 1 − 0.85 A IDM peak drain current note 2 − 3.4 A Ptot total power dissipation Ts = 80 °C − 0.5 W Tamb = 25 °C; note 3 − 0.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT 140 K/W thermal resistance from junction to soldering point Rth j-s MBK503 103 handbook, full pagewidth Rth j-s (K/W) δ=1 0.75 102 0.5 0.33 0.2 0.1 10 δ= P 0.05 tp T 0.02 t tp 0.01 T 1 10−6 Fig.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 10 µA 30 − − V VGSth gate-source threshold voltage VGS = VDS ; ID = 1 mA 0.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor handbook, full pagewidth BSH103 VDD 90 % Vin RL 10 % 0 Vout 90 % Vout Vin 10 % 0 td(off) td(on) tf MAM274 tr ton toff Fig.5 Switching times test circuit with input and output waveforms.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 MBK506 4 MBK504 300 handbook, halfpage handbook, halfpage ID (A) C (pF) 3 200 2 100 Ciss 1 Coss Crss 0 0 0 1 2 VGS (V) 0 3 20 VDS (V) 30 VGS = 0 ; f = 1 MHz; Tamb = 25 °C. VDS = 10 V; Tamb = 25 °C; tp = 300 µs; δ = 0. Fig.9 Fig.8 10 Capacitance as a function of drain-source voltage; typical values. Transfer characteristic; typical values.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 MBK510 MBK511 1.6 1.2 handbook, halfpage handbook, halfpage (1) k k (2) 1.2 0.8 0.8 0.4 0.4 0 −65 −15 V GSth at T j k = -------------------------------------. V GSth at 25°C 35 85 135 0 −65 185 Tj (°C) R DSon at T j k = ---------------------------------------- . R DSon at 25 °C VGSth at VDS = VGS; ID = 1 mA. Fig.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH103 NOTES 1998 Feb 11 11
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