Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBSH114,215, MOSFET

BSH114

N-channel enhancement mode ﬁeld effect transistor

Rev. 01 — 09 November 2000 Product speciﬁcation

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

technology.

Product availability:

BSH114 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Low on-state resistance

■ Very fast switching

■ Surface mount package.

3. Applications

■ Relay driver

■ DC to DC converter

■ General purpose switch.

4. Pinning information

1. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT23

2 source (s)

3 drain (d)

MSB003

Top view

MBB076

Summary of content (13 pages)

PAGE 1
BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Low on-state resistance Very fast switching Surface mount package. 3. Applications c c ■ Relay driver ■ DC to DC converter ■ General purpose switch. 4.
PAGE 2
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS drain-source voltage (DC) Conditions Typ Max Unit Tj = 25 to 150 °C − 100 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V − 0.85 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance 400 500 mΩ Min Max Unit VGS = 10 V; ID = 0.5 A 6.
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BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 03aa25 03aa17 120 120 Pder (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 Tsp 150 (oC) 0 175 25 50 75 100 125 150 175 Tsp (oC) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I D = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2.
PAGE 4
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-sp) Conditions Value Unit thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 Rth(j-amb) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 150 K/W 350 K/W 7.1 Transient thermal impedance 03ac54 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.
PAGE 5
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 100 130 − V Tj = −55 °C 95 − − V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C 2 3 4 V Tj = 150 °C 1.
PAGE 6
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 03ac56 03ac58 3 3 VGS = 10 V 7 V Tj = 25 ºC ID (A) 6V VDS > ID X RDSon ID (A) 5.8 V 5.6 V 2 2 5.4 V 5.2 V Tj = 150 ºC 1 Tj = 25 ºC 1 5.0 V 4.8 V 0 0 0 0.5 1 1.5 VDS (V) 2 Tj = 25 °C 0 2 4 6 VGS (V) 8 Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6.
PAGE 7
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 03aa32 5 VGS(th) 4.5 4 (V) 03aa35 10-1 ID (A) max. 10-2 3.5 3 10-3 typ. 2.5 min 2 typ max 10-4 min 1.5 1 10-5 0.5 0 10-6 -60 -20 20 60 100 140 Tj (oC) 180 0 1 2 3 4 VGS (V) 5 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ac60 03ac59 3 2.
PAGE 8
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 03ac60 3 03ac62 15 VGS = 0 V Tj = 25 ºC IS (A) VGS (V) 2 10 ID = 0.5 A VDD = 20 V 1 VDD = 80 V 5 Tj =150 ºC Tj = 25 ºC 0 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 0 6 QG (nC) 8 4 ID = 0.5 A; VDD = 20 V and 80 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14.
PAGE 9
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
PAGE 10
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20001109 CPCN Description - Product specification; initial version © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07708 Product specification Rev.
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BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
PAGE 13
BSH114 Philips Semiconductors N-channel enhancement mode field effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . .