DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP122 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER drain-source voltage (DC) 200 V ID drain current (DC) 550 mA RDSon drain-source on-state resistance 2.
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 200 − − V IDSS drain-source leakage current VDS = 160 V; VGS = 0 − − 1 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 100 nA VGSth gate-source threshold voltage ID = 1 mA; VGS = VDS 0.
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 NOTES 2001 May 18 6
Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 NOTES 2001 May 18 7
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