DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23
Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES • Low current (max. 100 mA) handbook, halfpage 3 • Low voltage (max. 15 V). 3 1 APPLICATIONS • High-speed, saturated switching applications for industrial service in thick and thin-film circuits. 2 1 2 Top view MAM256 DESCRIPTION PNP switching transistor in a SOT23 plastic package. Fig.1 Simplified outline (SOT23) and symbol.
Philips Semiconductors Product specification PNP switching transistor BSR12 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
Philips Semiconductors Product specification PNP switching transistor BSR12 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS IE = 0; VCB = −10 V MIN. TYP. MAX.
Philips Semiconductors Product specification PNP switching transistor BSR12 VCC = −3 V VBB R1 handbook, halfpage R2 C Vo R3 Vi DUT 50 Ω MGS460 R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF. Pulse generator: Pulse duration tp = 400 ns. Rise time tr < 1 ns. Output impedance ZO = 50 Ω. Sampling scope: Rise time tr < 1 ns. Input impedance Zi = 100 kΩ. Fig.2 Test circuit for switching times. MGS461 70 handbook, full pagewidth hFE 60 typ 50 40 30 20 −10−1 −1 −10 VCE = − 1 V; Tamb = 25°C. Fig.
Philips Semiconductors Product specification PNP switching transistor BSR12 MGS462 −500 handbook, full pagewidth VCEsat (mV) −400 −300 −200 −100 typ 0 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. MGS463 −1000 handbook, full pagewidth VBEsat (mV) −800 typ −600 −400 −200 0 −10−1 −1 −10 −102 IC (mA) IC/IB = 10. Fig.
Philips Semiconductors Product specification PNP switching transistor BSR12 MGS464 −500 handbook, halfpage VCEsat (mV) −400 (1) −300 −200 (2) −100 0 0 40 80 120 160 200 Tj (°C) (1) IC = 100 mA; IB = 10 mA (2) IC = 50 mA and IB = 5 mA. Fig.6 Collector-emitter saturation voltage as a function of junction temperature; typical values.
Philips Semiconductors Product specification PNP switching transistor BSR12 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification PNP switching transistor BSR12 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification PNP switching transistor BSR12 NOTES 1999 Jul 23 10
Philips Semiconductors Product specification PNP switching transistor BSR12 NOTES 1999 Jul 23 11
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