Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBSR56,215, MOSFET

1. Product profile

1.1 General description

Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a

plastic microminiature envelope designed for application in thick and thin-film circuits. The

transistors are intended for low-power, chopper or switching applications in industrial

service.

1.2 Features and benefits

 Interchangeable drain and source connections

 Small package

1.3 Applications

 Low-power, chopper or switching applications

 Thick and thin-film circuits

1.4 Quick reference data

BSR56; BSR57; BSR58

N-channel FETs

Rev. 3 — 25 June 2014 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions BSR56 BSR57 BSR58 Unit

Min Max Min Max Min Max

drain-source voltage - 40 - 40 - 40 V

DSS

drain leakage current V

= 15 V; V

=0V;

= 40 C

->50->20- >8mA

- - - <100 - <80 mA

GSoff

gate-source cut-off

voltage

= 15 V;

= 0.5 nA

>4 - >2 - >0.8 - V

<10 - <6 - <4 - V

feedback capacitance V

=0 V; V

= 10 V;

f = 1 MHz

-<5-<5-<5pF

Switching time (V

= 10 V; V

= 0 V)

off

turn-off time I

= 20 mA; V

GSM

= 10 V - <25 - - - - ns

= 10 mA; V

GSM

= 6 V - - - <50 - - ns

= 5 mA; V

GSM

= 4 V -----<100ns

tot

total power dissipation T

= 40 °C - 250 - 250 - 250 mW

Static characteristics

DSon

drain-source on-state

resistance

=0V; I

= 0 A; f = 1 kHz - <25 - <40 - <60 

Summary of content (10 pages)

PAGE 1
BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits  Interchangeable drain and source connections  Small package 1.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 drain [1] 2 source [1] 3 gate 3 g d s sym054 1 [1] Graphic symbol 2 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name BSR56 Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 BSR57 BSR58 4. Marking Table 4.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 7. Characteristics Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions BSR56 BSR57 BSR58 Min Max Min Max Min Max Unit IGSS gate-source cut-off current VDS = 0 V; VGS = 20 V - 1.0 - 1.0 - 1.0 nA IDSX drain cut-off current VDS = 15 V; VGS = 10 V - 1.0 - 1.0 - 1.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 0 Vi VGSM td 200 ns toff tr 10% Vo 90% aaa-013765 Fig 2. Switching times waveforms VDD R Vo TUT Vi 50 Ω aaa-013764 (1) BSR56; R = 464  (2) BSR57; R = 953  (3) BSR58; R = 1910  Fig 3. Test circuit Table 8. Test data Type BSR56_57_58 Product data sheet Pulse generator Oscilloscope  tr, tf Zo Ci tr Ri BSR56 0.02  1 ns 50   2.5 pF  0.75 ns  1 M BSR57 0.02  1 ns 50   2.5 pF  0.75 ns  1 M BSR58 0.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 8. Package outline Plastic surface-mounted package; 3 leads SOT023 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 1.1 0.1 bp D E 0.48 0.15 c 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.9 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 0.95 v w 0.2 0.1 sot023_po Outline version SOT023 Fig 4.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 9. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BSR56_57_58 v.3 20140625 Product data sheet - BSR56_57_58_CNV_2 Modifications: BSR56_57_58_CNV_2 BSR56_57_58 Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BSR56; BSR57; BSR58 NXP Semiconductors N-channel FETs Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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NXP Semiconductors BSR56; BSR57; BSR58 N-channel FETs 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . .