Datasheet

Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Extremely fast switching V
DSS
= 100 V
• Logic level compatible
• Subminiature surface mounting I
D
= 150 mA
package
R
DS(ON)
≤ 6 Ω (V
GS
= 10 V)
GENERAL DESCRIPTION PINNING SOT23
N-channel enhancement mode PIN DESCRIPTION
field-effect transistor in a plastic
envelope using ’trench’ 1 gate
technology.
2 source
Applications:-
• Relay driver 3 drain
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23 subminiature surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 150˚C - 100 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ - 100 V
V
GS
Gate-source voltage - ± 20 V
I
D
Continuous drain current T
a
= 25 ˚C - 150 mA
I
DM
Pulsed drain current T
a
= 25 ˚C - 600 mA
P
D
Total power dissipation T
a
= 25 ˚C - 0.25 W
T
j
, T
stg
Operating junction and - 55 150 ˚C
storage temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-a
Thermal resistance junction surface mounted on FR4 board 500 - K/W
to ambient
d
g
s
1
2
3
Top view
August 2000 1 Rev 1.000