Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBSS138BK,215, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

 ESD protection up to 1.5 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Rev. 1 — 4 August 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C --60V

gate-source voltage -20 - 20 V

drain current V

=10V; T

amb

=25°C

[1]

- - 360 mA

Static characteristics

DSon

drain-source on-state

resistance

=10V; I

=350mA;

=25°C

-11.6Ω

Summary of content (16 pages)

PAGE 1
SO T2 3 BSS138BK 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 4 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  ESD protection up to 1.5 kV  Very fast switching  AEC-Q101 qualified  Trench MOSFET technology 1.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BK TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET aaa-000157 10 ID (A) 1 (1) 10-1 (2) (3) (4) 10-2 (5) 10-3 10-1 1 10 102 VDS (V) IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 °C (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa015 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05 0.02 0.01 10 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa016 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 10 0.2 0.1 0.05 0 0.02 0.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.48 1.1 1.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET aaa-000158 0.4 10 V ID (A) 2V 2.5 V aaa-000159 10-3 ID (A) 0.3 10-4 1.75 V 0.2 (1) (2) 0.5 1.0 (3) 10-5 0.1 1.5 V 0 VGS = 1.25 V 0 1 2 3 VDS (V) 4 10-6 0 Tj = 25 °C 1.5 VGS (V) 2.0 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET aaa-000162 0.6 (1) ID (A) aaa-000163 2 a (2) 1.5 0.4 1 0.2 0.5 (2) 0 0 (1) 1.0 2.0 VGS (V) 0 -60 3.0 0 60 120 Tj = (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-000164 2 Fig 11.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET aaa-000166 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 QG (nC) ID = 0.3 A; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-000167 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138BK Product data sheet All information provided in this document is subject to legal disclaimers.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138BK v.1 20110804 Product data sheet - - BSS138BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 August 2011 © NXP B.V. 2011. All rights reserved.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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BSS138BK NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . .