Datasheet

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 4 August 2011 7 of 16
NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
T
j
= 25 °C T
j
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C
(1) V
GS
= 1.5 V
(2) V
GS
= 1.75 V
(3) V
GS
= 2.0 V
(4) V
GS
= 2.25 V
(5) V
GS
= 4.5 V
(6) V
GS
= 10 V
I
D
= 300 mA
(1) T
j
= 150 °C
(2) T
j
= 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
04312
aaa-000158
0.2
0.1
0.3
0.4
I
D
(A)
0
V
GS
= 1.25 V
1.75 V
1.5 V
2 V
2.5 V
10 V
aaa-000159
10
-4
10
-5
10
-3
I
D
(A)
10
-6
V
GS
(V)
0 2.01.50.5 1.0
(2)
(1)
(3)
I
D
(A)
0 0.40.30.1 0.2
aaa-000160
2
4
6
R
DS(on)
(Ω)
0
(1)
(2)
(3)
(4)
(5)
(6)
V
GS
(V)
0108462
aaa-000161
2
4
6
R
DS(on)
(Ω)
0
(1)
(2)