Datasheet

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 4 August 2011 8 of 16
NXP Semiconductors
BSS138BK
60 V, 360 mA N-channel Trench MOSFET
V
DS
> I
D
x R
DSon
(1) T
j
= 25 °C
(2) T
j
= 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V
GS
(V)
0 3.02.01.0
aaa-000162
0.2
0.4
0.6
I
D
(A)
0
(1)
(1)(2)
(2)
T
j
= (°C)
-60 180120060
aaa-000163
1
0.5
1.5
2
a
0
T
j
(°C)
-60 180120060
aaa-000164
1
0.5
1.5
2
V
GS(th)
(V)
0
(2)
(3)
(1)
aaa-000165
V
DS
(V)
10
-1
10
2
101
10
10
2
C
(pF)
1
(1)
(2)
(3)