BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source1 2 G1 gate1 3 D2 drain2 4 S2 source2 5 G2 gate2 6 D1 drain1 Simplified outline 6 5 4 1 2 3 Graphic symbol D1 S1 D2 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number BSS138PS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa122 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) 10−2 (5) (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 0.9 1.2 1.5 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1 2 Ω - 0.9 1.6 Ω - 700 - mS - 0.72 0.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa112 1.0 VGS = 3.5 V ID (A) 017aaa113 10−3 2.75 V 3.0 V ID (A) 0.8 2.5 V 10−4 (1) 0.6 (2) (3) 2.25 V 0.4 10−5 2.0 V 0.2 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 0.5 1.0 1.5 VDS (V) 2.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Per transistor: Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa116 0.8 ID (A) 017aaa022 2.4 a (1) (2) 0.6 1.8 0.4 1.2 0.2 0.6 (2) 0.0 0.0 1.0 (1) 2.0 3.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Per transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa117 2.0 Fig 11.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 017aaa119 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QGD QG(tot) QG (nC) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Per transistor: Gate-source voltage as a function of gate charge; typical values Fig 15. Per transistor: Gate charge waveform definitions 017aaa120 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 c bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138PS v.1 20101102 Product data sheet - - BSS138PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.
BSS138PS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information .
