Datasheet

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 November 2010 2 of 16
NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate1
3D2drain2
4S2source2
5 G2 gate2
6D1drain1
132
4
56
S
1
D
1
G
1
S
2
msd90
1
D
2
G
2
Table 3. Ordering information
Type number Package
Name Description Version
BSS138PS SC-88 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
Type number Marking code
[1]
BSS138PS NZ*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
drain-source voltage T
amb
=25°C-60V
V
GS
gate-source voltage T
amb
=25°C-±20 V
I
D
drain current V
GS
=10V
[1]
T
amb
=25°C-320mA
T
amb
=100°C-200mA
I
DM
peak drain current T
amb
=25°C;
single pulse; t
p
≤ 10 μs
-1.2A