SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G SOT883 (SOT883) S sym146 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKM SOT883 leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 4.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -50 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = -10 V; Tamb = 25 °C - -230 mA VGS = -10 V; Tamb = 100 °C [1] - -150 mA - -0.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 001aao138 -10 ID (A) -1 (1) -10-1 (2) (3) (4) (5) -10-2 10-1 -1 -10 VDS (V) -102 IDM is single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - 310 360 K/W [2] - 150 175 K/W - - 40 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -10 µA; VGS = 0 V; Tj = 25 °C -50 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.1 -1.6 -2.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 001aao124 -0.20 001aao125 -10-3 VGS = -10 V -4.0 V -3.5 V ID (A) ID (A) -0.15 (3) (2) (1) -10-4 -3.0 V -0.10 -10-5 -2.5 V -0.05 0 0 -1 -2 -3 VDS (V) -4 -10-6 Tj = 25 °C 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics; drain current as a function of drain-source voltage; typical values Fig 7.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 001aao128 -0.20 ID (A) 001aao129 2.0 a (1) (2) -0.15 1.5 -0.10 1.0 -0.05 0.5 (2) (1) 0 0 -1 -2 -3 VGS (V) 0 -60 -4 0 60 120 Tj (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao130 -3 Fig 11.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 001aao132 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 QGS2 QGS -2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 QG (nC) 0.6 ID = -0.2 A; VDS = -25 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao133 -0.3 IS (A) -0.2 -0.1 (1) 0 0 -0.4 (2) -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS84AKM Product data sheet All information provided in this document is subject to legal disclaimers.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 9. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 10. Soldering 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig 19. Reflow soldering footprint for SOT883 (SOT883) BSS84AKM Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © NXP B.V. 2011. All rights reserved.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS84AKM v.1 20110523 Product data sheet - - BSS84AKM Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © NXP B.V. 2011. All rights reserved.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
BSS84AKM NXP Semiconductors 50 V, 230 mA P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . .
