Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsBSS84AKS,115, MOSFET

1. Product profile

1.1 General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363

(SC-88) package using Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

 ESD protection up to 1 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

Rev. 1 — 23 May 2011 Product data sheet

TSSOP6

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

drain-source voltage T

=25°C ---50V

gate-source voltage -20 - 20 V

drain current V

=-10V; T

amb

=25°C

[1]

---160mA

Static characteristics (per transistor)

DSon

drain-source on-state

resistance

=-10V; I

= -100 mA;

=25°C

-4.57.5Ω

Summary of content (17 pages)

PAGE 1
TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source 1 2 G1 gate 1 3 D2 drain 2 4 S2 source 2 5 G2 gate 2 6 D1 drain 1 Simplified outline Graphic symbol 6 5 4 1 2 3 D1 D2 G1 G2 SOT363 (TSSOP6) S1 S2 sym147 3. Ordering information Table 3.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 001aao121 120 001aao122 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -10 µA; VGS = 0 V; Tj = 25 °C -50 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.1 -1.6 -2.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 001aao124 -0.20 001aao125 -10-3 VGS = -10 V -4.0 V -3.5 V ID (A) ID (A) -0.15 (3) (2) (1) -10-4 -3.0 V -0.10 -10-5 -2.5 V -0.05 0 0 -1 -2 -3 VDS (V) -4 -10-6 Tj = 25 °C 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics; drain current as a function of drain-source voltage; typical values Fig 7.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 001aao128 -0.20 ID (A) 001aao129 2.0 a (1) (2) -0.15 1.5 -0.10 1.0 -0.05 0.5 (2) (1) 0 0 -1 -2 -3 VGS (V) 0 -60 -4 0 60 120 Tj (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao130 -3 Fig 11.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 001aao132 -10 VDS VGS (V) ID -8 VGS(pl) -6 VGS(th) VGS -4 QGS1 QGS2 QGS -2 QGD QG(tot) 003aaa508 0 0 0.2 0.4 QG (nC) 0.6 ID = -0.2 A; VDS = -25 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao133 -0.3 IS (A) -0.2 -0.1 (1) 0 0 -0.4 (2) -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 20.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS84AKS v.2 20110523 Product data sheet - - BSS84AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 © NXP B.V. 2011. All rights reserved.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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BSS84AKS NXP Semiconductors 50 V, 160 mA dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .