Datasheet

2004 Dec 09 4
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
collector-emitter cut-off current
BST50 V
BE
=0V; V
CE
=45V −−50 nA
BST51 V
BE
=0V; V
CE
=60V −−50 nA
BST52 V
BE
=0V; V
CE
=80V −−50 nA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
=4V −−50 nA
h
FE
DC current gain V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA 1000 −−
I
C
= 500 mA 2000 −−
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA −−1.3 V
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150 °C
−−1.3 V
V
BEsat
base-emitter saturation voltage I
C
= 500 mA; I
B
= 0.5 mA −−1.9 V
f
T
transition frequency I
C
= 500 mA; V
CE
=5V;
f = 100 MHz
200 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
= 0.5 mA
400 ns
t
off
turn-off time 1500 ns