Datasheet
2004 Dec 09 5
Philips Semiconductors Product specification
NPN Darlington transistors BST50; BST51; BST52
Fig.2 DC current gain; typical values.
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0
5000
1000
2000
3000
4000
MGD838
10
−1
1
I
C
(mA)
h
FE
10 10
2
10
3
V
CE
=10V.
Fig.3 Test circuit for switching times.
n
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R
C
R2
R1
DUT
MLB826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
i
V
CC
V
i
= 10 V; T = 200 µs; t
p
=6µs; t
r
=t
f
≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; R
B
=10kΩ; R
C
=18Ω.
V
BB
= −1.8 V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
=50Ω.